Abstract
We report here the first experimental and theoretical investigation of free-carrier nonlinear optical processes in Type-II superlattices with narrow energy gaps. A general analysis of the effects of semiconductor band structure on nonlinear response at long wavelengths shows that the most favorable nonlinearities may be achievable in heterostructures with an indirect band alignment, where the indirectness may be in either real or momentum space. One of the most relevant figures of merit for devices is Δn/α, where An is the nonlinear modulation of the index of refraction and a is the absorption coefficient.
© 1992 Optical Society of America
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