Abstract
Recently, amplified femtosecond Ti:Sapphire lasers enabled the observation of fourth harmonic generation (FHG) from crystalline surfaces of noncentrosymmetric (GaAs(001)) and centrosymmetric (Si(001)) semiconductors below the damage threshold.1 We now extend this work by observing χ(4) at the Si(111)/SiO2 interface, not only by direct FHG, but by electromodulated third harmonic generation (THG), which is proportional to The latter provides a much stronger signal at lower fundamental power than FHG. The anisotropic properties of THG and FHG have been measured by azimuthal sample rotation and compared to a phenomenological model based on the symmetry of the (111) surface. THG and FHG have been measured from n-Si(111)/SiO2/Cr MOS capacitors with varying bias to allow the observation, for the first time, of DC electric field induced higher harmonics.
© 1999 Optical Society of America
PDF ArticleMore Like This
A.A. Fedyanin, A.V. Melnikov, E.D. Mishina, A.N. Rubtsov, O.A. Aktsipetrov, M.H. Anderson, P.T. Wilson, M. ter Beek, X.F. Hu, J.I. Dadap, and M.C. Downer
QFH7 International Quantum Electronics Conference (IQEC) 1998
Y.-S. Lee and M.C. Downer
QFC1 International Quantum Electronics Conference (IQEC) 1998
Y.-S. Lee, M. H. Anderson, and M. C. Downer
QWC6 Quantum Electronics and Laser Science Conference (CLEO:FS) 1997