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Abstract
A fast-switching ${{\rm TiO}_2}/{{\rm SnO}_2}$ heterostructure thin-film (TF) photodetector synthesized by electron beam evaporation technique is analyzed in this study. The substrate utilized is n-type silicon (Si), while gold (Au) is employed as the top electrode. To assess sample morphology and confirm elemental composition, field emission scanning electron microscopy (FESEM), energy dispersive x-ray spectroscopy (EDS), and chemical mapping were conducted. Structural characteristics were determined using X-ray diffraction (XRD) analysis. The XRD analysis confirmed the presence of various phases of ${{\rm TiO}_2}$ (anatase and rutile) and ${{\rm SnO}_2}$ (rutile). UV-Vis spectroscopy revealed multiple absorption peaks, at 447 nm, 495 nm, 560 nm, and 673 nm, within the visible spectrum. The device demonstrates high detectivity (${D^*}$) of ${1.737} \times {{10}^9}$ Jones and a low noise equivalent power (NEP) of ${0.765} \times {{10}^{- 10}}\;{\rm W}$. Evaluation of the device’s switching response through current-time characteristic (I-T) analysis indicates rapid switching with a rise time and fall time of 0.33 s and 0.36 s, respectively.
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