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Photoemission properties of the variable component GaInAsSb heterojunction nanopillar array cathode

JOSA A
  • zhidong Wang, Lei Liu, zhihao Cao, Jian Tian, and Xingyue Zhangyang
  • received 09/21/2023; accepted 05/15/2024; posted 05/15/2024; Doc. ID 506364
  • Abstract: The GaxIn1-xAsySb1-y heterojunction NPAs exhibit different properties depending on thematerial composition. Changing the Ga composition significantly affects the quantum efficiencyand broadening of the heterojunction nanopillar array, while varying the As composition affectsthe peak position of its quantum efficiency. The quantum efficiency of the heterojunction isnotably influenced by changes in the height of the top layer of the heterojunction, and when thereis a difference in quantum efficiency between the two materials, the quantum efficiency of theheterojunction exhibits extremum values. Furthermore, external electric fields significantly affectthe quantum efficiency of nanopillar arrays, providing important references and theoreticalfoundations for designing and optimizing resonantly enhanced GaInAsSb nanopillar arrayphotonic cathodes.